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            4寸晶棒

            2014-08-31




            Item


            4"Specification

            Unit

            Remark


            Substrate grade


            Sapphire Ingot

            ~

             


            Crystal growth method


            Kyropulos Al2O3 or another on agreement

            ~

             


            Optical Characteristic


            High purity optical grade monocrystalline

            ~

             


            Orientation


            C-plane(0001) ±0.1

            ~

             


            Diameter of ingot


            100.2,±0.1?

            mm

             


            Length of Prime flat


            30.0±0.5

            mm

             


            Orientation of Prime flat


            A-plane(1 1-2 0)± 0.2?

            ~

             


            Rod Length


            50

            mm

             


            Surface Finish


            Circumference surface Ra < 1 μm; Both ends surface Ra < 1 μm

            μm

             


            Chip size on both sides

            < 0.5 mm x 0.5 mm

            ~

             

            Crystal Bubble/Defects Percentage


            < 15%

            ~


            Defects zones include bubbles, scattering centers, grain boundary, twinning, inclusion, stress distortion, and cracks inside. Defect zones need to be marked。


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